22 citations · 58 across the 7 of their papers we have counts for
7 papers
Controlled epitaxy of room-temperature quantum emitters in gallium nitride
Katie M. Eggleton, Joseph K. Cannon, Sam G. Bishop +5
The ability to generate quantum light at room temperature on a mature semiconductor platform opens up new possibilities for quantum technologies. Heteroepitaxial growth of gallium…
Tracking the creation of single photon emitters in AlN by implantation and annealing
H. B. Yağcı, E. Nieto Hernández, J. K. Cannon +6
In this study, we inspect and analyze the effect of Al implantation into AlN by conducting confocal microscopy on the ion implanted regions, before and after implantation, followed…
Measuring photon correlation using imperfect detectors
Rachel N. Clark, Sam G. Bishop, Joseph K. Cannon +4
Single-photon detectors are ``blind" after the detection of a photon, and thereafter display a characteristic recovery in efficiency, during which the number of undetected photons…
Fabrication of quantum emitters in aluminium nitride by Al-ion implantation and thermal annealing
E. Nieto Hernández, H. B. Yağcı, V. Pugliese +8
Single-photon emitters (SPEs) within wide-bandgap materials represent an appealing platform for the development of single-photon sources operating at room temperatures. Group III-…
Evanescent-field assisted photon collection from quantum emitters under a solid immersion lens
S G Bishop, J K Cannon, H B Yagci +4
Solid-state quantum light sources are being intensively investigated for applications in quantum technology. A key challenge is to extract light from host materials with high refra…
Polarization study of single color centers in aluminum nitride
J. K. Cannon, S. G. Bishop, J. P. Hadden +2
Color centers in wide-bandgap semiconductors are a promising class of solid-state quantum light source, many of which operate at room temperature. We examine a family of color cent…
Enhanced light collection from a gallium nitride color center using a near index-matched solid immersion lens
S. G. Bishop, J. P. Hadden, R. Hekmati +3
Among the wide-bandgap compound semiconductors, gallium nitride is the most widely available material due to its prevalence in the solid state lighting and high-speed/high-power el…