Giant $g$-factors and fully spin-polarized states in metamorphic short-period InAsSb/InSb superlattices

Abstract

Realizing a large Landé $g$-factor of electrons in solid-state materials has long been thought of as a rewarding task as it can trigger abundant immediate applications in spintronics and quantum computing. Here, by using metamorphic InAsSb/InSb superlattices (SLs), we demonstrate an unprecedented high value of $g\approx 104$, twice larger than that in bulk InSb, and fully spin-polarized states at low magnetic fields. In addition, we show that the $g$-factor can be tuned on demand from 20 to 110 via varying the SL period. The key ingredients of such a wide tunability are the wavefunction mixing and overlap between the electron and hole states, which have drawn little attention in prior studies. Our work not only establishes metamorphic InAsSb/InSb as a promising and competitive material platform for future quantum devices but also provides a new route toward $g$-factor engineering in semiconductor structures.

References in corpus (6)

• Quantum Spin Hall Effect in Inverted Type II Semiconductors
• Single valley Dirac fermions in zero-gap HgTe quantum wells
• Electronic States and Cyclotron Resonance in n-type InMnAs
• Probing the semiconductor to semimetal transition in InAs/GaSb double quantum wells by magneto-infrared spectroscopy
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Cited by in corpus (4)

• Josephson diode based on conventional superconductors and a chiral quantum dot
• The discovery of three-dimensional Van Hove singularity
• $g$-factor engineering with InAsSb alloys toward zero band gap limit
• Is it possible to determine unambiguously the Berry phase solely from quantum oscillations?