Raman spectra of twisted bilayer graphene close to the magic angle
arXiv:2201.01762 · doi:10.1088/2053-1583/ac4af9
Abstract
In this work, we study the Raman spectra of twisted bilayer graphene samples as a function of their twist-angles (), ranging from 0.03 to 3.40, where local are determined by analysis of their associated moire superlattices, as imaged by scanning microwave impedance microscopy. Three standard excitation laser lines are used (457, 532, and 633 nm wavelengths), and the main Raman active graphene bands (G and 2D) are considered. Our results reveal that electron-phonon interaction influences the G band's linewidth close to the magic angle regardless of laser excitation wavelength. Also, the 2D band lineshape in the < 1 regime is dictated by crystal lattice and depends on both the Bernal (AB and BA) stacking bilayer graphene and strain soliton regions (SP). We propose a geometrical model to explain the 2D lineshape variations, and from it, we estimate the SP width when moving towards the magic angle.
References in corpus (9)
- Electric Field Effect in Atomically Thin Carbon Films
- The Raman Fingerprint of Graphene
- Boron nitride substrates for high-quality graphene electronics
- Optical Separation of Mechanical Strain from Charge Doping in Graphene
- Flat Bands in Slightly Twisted Bilayer Graphene
- Theory of double-resonant Raman spectra in graphene: intensity and line shape of defect-induced and two-phonon bands
- Twistronics: Manipulating the Electronic Properties of Two-dimensional Layered Structures through their Twist Angle
- Splitting of the Raman band of graphene subjected to strain
- Raman-scattering study of the phonon dispersion in twisted bi-layer graphene