Cryogenic Memory Technologies

Abstract

The surging interest in quantum computing, space electronics, and superconducting circuits has led to new developments in cryogenic data storage technology. Quantum computers promise to far extend our processing capabilities and may allow solving currently intractable computational challenges. Even with the advent of the quantum computing era, ultra-fast and energy-efficient classical computing systems are still in high demand. One of the classical platforms that can achieve this dream combination is superconducting single flux quantum (SFQ) electronics. A major roadblock towards implementing scalable quantum computers and practical SFQ circuits is the lack of suitable and compatible cryogenic memory that can operate at 4 Kelvin (or lower) temperature. Cryogenic memory is also critically important in space-based applications. A multitude of device technologies have already been explored to find suitable candidates for cryogenic data storage. Here, we review the existing and emerging variants of cryogenic memory technologies. To ensure an organized discussion, we categorize the family of cryogenic memory platforms into three types: superconducting, non-superconducting, and hybrid. We scrutinize the challenges associated with these technologies and discuss their future prospects.

21 pages, 6 figures, 1 table

References in corpus (9)

• Demonstration of Two-Qubit Algorithms with a Superconducting Quantum Processor
• An addressable quantum dot qubit with fault-tolerant control fidelity
• Critical Current Oscillations in Strong Ferromagnetic Pi-Junctions
• Ferromagnetic Josephson switching device with high characteristic voltage
• A superconducting-nanowire 3-terminal electronic device
• Josephson tunnel junctions with strong ferromagnetic interlayer
• A Low Temperature Functioning CoFeB/MgO Based Perpendicular Magnetic Tunnel Junction for Cryogenic Nonvolatile Random Access Memory
• A Non-Volatile Cryogenic Random-Access Memory Based on the Quantum Anomalous Hall Effect
• Sub-nanosecond switching in a cryogenic spin-torque spin-valve memory element with a dilute permalloy free layer

Cited by in corpus (10)

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• Subthreshold Swing Behavior in Amorphous Indium-Gallium-Zinc-Oxide Transistors from Room to Cryogenic Temperatures
• Tuneable magnetic behaviour, electronic structure and nitrogen vacancy formation in Gd${}_x$Sm${}_{1-x}$N
• Cryogenic Behavior of High-Permittivity Gate Dielectrics: The Impact of the Atomic Layer Deposition Temperature and the Lithographic Patterning Method
• Field-Resilient Supercurrent Diode in a Multiferroic Josephson Junction
• Numerical modelling of a vortex-based superconducting memory cell: dynamics and geometrical optimization of a fluxonic quantum dot
• Nonvolatile Cryogenic Phase Slip Memory with Single-Shot Readout
• Quantum Mechanics of an Abrikosov Vortex in Nanofabricated Pinning Potential