Thickness-induced crossover from strong to weak collective pinning in exfoliated FeTe$_{0.6}$Se$_{0.4}$ thin films at 1 T

Ryoya Nakamura; Masashi Tokuda; Mori Watanabe; Masamichi Nakajima; Kensuke Kobayashi; Yasuhiro Niimi

doi:10.1103/PhysRevB.104.165412

paper

Thickness-induced crossover from strong to weak collective pinning in exfoliated FeTe $_{0.6}$ Se $_{0.4}$ thin films at 1 T

arXiv:2110.10426 · doi:10.1103/PhysRevB.104.165412

Abstract

We studied flux pinning in exfoliated FeTe $_{0.6}$ Se $_{0.4}$ thin-film devices with a thickness $d$ from 30 to 150 nm by measuring the critical current density $J_{c}$ . In bulk FeTe $_{0.6}$ Se $_{0.4}$ , the flux pinning has been discussed in the framework of weak collective pinning, while there is little knowledge on the pinning mechanism in the thin-film region. From the thickness $d$ dependence of $J_{c}$ at a fixed magnetic field of 1 T, we found that the strong pinning is dominant below $d \approx 70$ nm, while the weak collective pinning becomes more important above $d \approx 100$ nm. This crossover thickness can be explained by the theoretical model proposed by van der Beek $et al$ [Phys. Rev. B. $66$ , 024523 (2002)].

arXiv comment8 pages, 6 figures

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Thickness-induced crossover from strong to weak collective pinning in exfoliated FeTe0.6​Se0.4​ thin films at 1 T

Abstract

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Thickness-induced crossover from strong to weak collective pinning in exfoliated FeTe $_{0.6}$ Se $_{0.4}$ thin films at 1 T