High-Q silicon nitride drum resonators strongly coupled to gates
arXiv:2104.07142 · doi:10.1021/acs.nanolett.1c01477
Abstract
Silicon nitride (SiN) mechanical resonators with high quality mechanical properties are attractive for fundamental research and applications. However, it is challenging to maintain these mechanical properties while achieving strong coupling to an electrical circuit for efficient on-chip integration. Here, we present a SiN drum resonator covered with an aluminum thin film, enabling large capacitive coupling to a suspended top-gate. Implementing the full electrical measurement scheme, we demonstrate a high quality factor ~ 1E4 (comparable to that of bare drums at room temperature) and present our ability to detect ? 10 mechanical modes at low temperature. The drum resonator is also coupled to a microwave cavity, so that we can perform optomechanical sideband pumping with a fairly good coupling strength G and demonstrate mechanical parametric amplification. This SiN drum resonator design provides efficient electrical integration and exhibits promising features for exploring mode coupling and signal processing.
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Cited by in corpus (5)
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- Mesoscopic Quantum Thermo-mechanics: a new frontier of experimental physics
- Imaging nanomechanical vibrations and manipulating parametric mode coupling via scanning microwave microscopy
- A Novel Architecture for room temperature microwave optomechanical experiments