Intrinsic piezoelectric ferromagnetism with large out-of-plane piezoelectric response in Janus monolayer $\mathrm{CrB}{\mathrm{r}}_{1.5}{\mathrm{I}}_{1.5}$

Abstract

A two-dimensional (2D) material system with both piezoelectricity and ferromagnetic (FM) order, referred to as a 2D piezoelectric ferromagnetism (PFM), may open up unprecedented opportunities for intriguing physics. Inspired by experimentally synthesized Janus monolayer MoSSe from $\mathrm{Mo}{\mathrm{S}}_2$, in this work, the Janus monolayer $\mathrm{CrB}{\mathrm{r}}_{1.5}{\mathrm{I}}_{1.5}$ with dynamic, mechanical and thermal stabilities is predicted, which is constructed from synthesized ferromagnetic $\mathrm{Cr}{\mathrm{I}}_3$ monolayer by replacing the top I atomic layer with Br atoms. Calculated results show that monolayer $\mathrm{CrB}{\mathrm{r}}_{1.5}{\mathrm{I}}_{1.5}$ is an intrinsic FM half semiconductor with valence and conduction bands being fully spin-polarized in the same spin direction. Furthermore, monolayer $\mathrm{CrB}{\mathrm{r}}_{1.5}{\mathrm{I}}_{1.5}$ possesses a sizable magnetic anisotropy energy (MAE). By symmetry analysis, it is found that both in-plane and out-of-plane piezoelectric polarizations can be induced by a uniaxial strain in the basal plane. The calculated in-plane $d_{22}$ value of 0.557 pm/V is small. However, more excitingly, the out-of-plane $d_{31}$ is as high as 1.138 pm/V, which is obviously higher compared with ones of other 2D known materials. The strong out of-plane piezoelectricity is highly desirable for ultrathin piezoelectric devices. Moreover, strain engineering is used to tune piezoelectricity of monolayer $\mathrm{CrB}{\mathrm{r}}_{1.5}{\mathrm{I}}_{1.5}$. It is found that compressive strain can improve the $d_{22}$, and tensile strain can enhance the $d_{31}$. A FM order to antiferromagnetic (AFM) order phase transition can be induced by compressive strain, and the critical point is about 0.95 strain. That is to say that a 2D piezoelectric antiferromagnetism (PAFM) can be achieved by compressive strain, and the corresponding $d_{22}$ and $d_{31}$ are 0.677 pm/V and 0.999 pm/V at 0.94 strain, respectively.

10 pages, 15 figures

References in corpus (4)

• Intrinsic piezoelectricity in monolayer $\mathrm{XS}{\mathrm{i}}_2{\mathrm{N}}_4$ (X=Ti, Zr, Hf, Cr, Mo and W)
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Cited by in corpus (4)

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• Janus monolayer ScXY (X$\ne$Y=Cl, Br and I) for piezoelectric and valleytronic application: a first-principle prediction
• Piezoelectric quantum spin Hall insulator VCClBr monolayer with pure out-of-plane piezoelectric response