Intrinsic piezoelectric ferromagnetism with large out-of-plane piezoelectric response in Janus monolayer
arXiv:2103.15141 · doi:10.1063/5.0055014
Abstract
A two-dimensional (2D) material system with both piezoelectricity and ferromagnetic (FM) order, referred to as a 2D piezoelectric ferromagnetism (PFM), may open up unprecedented opportunities for intriguing physics. Inspired by experimentally synthesized Janus monolayer MoSSe from , in this work, the Janus monolayer with dynamic, mechanical and thermal stabilities is predicted, which is constructed from synthesized ferromagnetic monolayer by replacing the top I atomic layer with Br atoms. Calculated results show that monolayer is an intrinsic FM half semiconductor with valence and conduction bands being fully spin-polarized in the same spin direction. Furthermore, monolayer possesses a sizable magnetic anisotropy energy (MAE). By symmetry analysis, it is found that both in-plane and out-of-plane piezoelectric polarizations can be induced by a uniaxial strain in the basal plane. The calculated in-plane value of 0.557 pm/V is small. However, more excitingly, the out-of-plane is as high as 1.138 pm/V, which is obviously higher compared with ones of other 2D known materials. The strong out of-plane piezoelectricity is highly desirable for ultrathin piezoelectric devices. Moreover, strain engineering is used to tune piezoelectricity of monolayer . It is found that compressive strain can improve the , and tensile strain can enhance the . A FM order to antiferromagnetic (AFM) order phase transition can be induced by compressive strain, and the critical point is about 0.95 strain. That is to say that a 2D piezoelectric antiferromagnetism (PAFM) can be achieved by compressive strain, and the corresponding and are 0.677 pm/V and 0.999 pm/V at 0.94 strain, respectively.
arXiv comment10 pages, 15 figures
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