Piezoelectricity in Two-Dimensional Group III Monochalcogenides
arXiv:1503.07379 · doi:10.1007/s12274-015-0878-8
Abstract
We find that several layer-phase group-III monochalcogenides, including GaS, GaSe and InSe, are piezoelectric in the monolayer form. First-principles calculations reveal that the piezoelectric coefficients of monolayer GaS, GaSe and InSe are on the same order of magnitude as the earlier discovered two-dimensional piezoelectric materials, such as BN and MoS2 monolayers. Our study expands the family of two dimensional piezoelectric materials, suggesting that strong piezoelectric response can occur in a wide range of two dimensional materials with broken inversion symmetry. The co-existence of piezoelectricity and superior photo-sensitivity in these two-dimensional semiconductors enables the integration of electromechanical and optical sensors on the same material platform.
References in corpus (1)
Cited by in corpus (20)
- Giant Piezoelectricity in Monolayer Group IV Monochalcogenides: SnSe, SnS, GeSe and GeS
- Structure-driven intercalated architecture of septuple-atomic-layer family with diverse properties from semiconductor to topological insulator to Ising superconductor
- Recent advances in MXenes: from fundamentals to applications
- Colloquium: Physical properties of group-IV monochalcogenide monolayers
- Low-Symmetry Two-Dimensional Materials for Electronic and Photonic Applications
- Data-driven discovery of high performance layered van der Waals piezoelectric NbOI2
- Controllable two-dimensional robust multiferroic GaTeCl monolayer with giant ferroelectricity and superior multifunctions
- A possible way to achieve anomalous valley Hall effect by piezoelectric effect in monolayer
- Mechanisms of pyroelectricity in three- and two-dimensional materials
- Electric field and Strain-induced Band-gap Engineering and Manipulation of the Rashba Spin Splitting in Janus van der Waals Heterostructures
- Electronic structures of iMAX phases and their two-dimensional derivatives: A family of piezoelectric materials
- Long-range electrostatic contribution to the electron-phonon couplings and mobilities of two-dimensional and bulk materials
- Large Piezoelectric Response of van der Waals Layered Solids
- Intrinsic piezoelectric ferromagnetism with large out-of-plane piezoelectric response in Janus monolayer
- Prediction of Magnetoelectric Multiferroic Janus Monolayers VOXY(X/Y = F, Cl, Br, or I, and XY) with in-plane ferroelectricity and out-of-plane piezoelectricity
- Coexistence of intrinsic piezoelectricity, ferromagnetism and nontrivial band topology in Li-decorated Janus monolayer with high Curie temperature
- Direct band gap in gallium sulfide nanostructures
- Lattice vibrations and electronic properties of GaSe nanosheets from first principles
- Piezoelectric quantum spin Hall insulator VCClBr monolayer with pure out-of-plane piezoelectric response
- Strong atomic reconstruction in twisted bilayers of highly flexible InSe: Machine-Learned Interatomic Potential and continuum model approaches