Large piezoelectric coefficients combined with high electron mobilities in Janus monolayer XTeI (X=Sb and Bi): a first-principle study
arXiv:1909.13227 · doi:10.1063/1.5134960
Abstract
The absence of both the inversion symmetry and out-of-plane mirror symmetry together with spin-orbit coupling (SOC) can induce novel electronic and piezoelectric properties. In this work, the piezoelectric properties along with carrier mobilities of Janus monolayer XTeI (X=Sb and Bi) are studied by density functional theory (DFT). By using generalized gradient approximation (GGA) plus SOC, they are found to be indirect gap semiconductors with the Rashba spin splitting. The piezoelectric tensors of Janus monolayer XTeI (X=Sb and Bi) are reported by using density functional perturbation theory (DFPT). Due to lacking both the inversion symmetry and out-of-plane mirror symmetry for Janus monolayer XTeI (X=Sb and Bi), both in-plane and out-of-plane piezoelectric effects can be observed, and the large piezoelectric coefficients are predicted (e.g. =12.95 pm/V for SbTeI and =8.20 pm/V for BiTeI), which are comparable and even higher than ones of many other two-dimensional (2D) materials and other well-known bulk piezoelectric materials, especially for out-of-plane piezoelectric coefficients. With GGA+SOC, the high electron carrier mobilities are obtained, and the electron mobility of BiTeI along armchair direction reaches up to about 1319 . The carrier mobility shows a rather pronounced anisotropy between electron and hole/armchair and zigzag directions. It is found that tensile strain can improve the piezoelectric coefficients of Janus monolayer XTeI (X=Sb and Bi). For example, at 4\% strain, the of SbTeI (BiTeI) is up to 20.12 pm/V (11.48 pm/V), compared with unstrained 12.95 pm/V (8.20 pm/V). Our works imply Janus monolayer XTeI (X=Sb and Bi) have potential applications in flexible electronics and piezoelectric devices, and can stimulate further experimental works.
arXiv comment8 pages, 5 figures
References in corpus (6)
- Systematic treatment of displacements, strains and electric fields in density-functional perturbation theory
- Giant Piezoelectricity in Monolayer Group IV Monochalcogenides: SnSe, SnS, GeSe and GeS
- Ab-Initio Simulations of Deformation Potentials and Electron Mobility in Chemically Modified Graphene and two-dimensional hexagonal Boron-Nitride
- Predicted Janus SnSSe monolayer: a comprehensive first-principle study
- Magnetic states and optical properties of single-layer carbon-doped hexagonal boron nitride
- Potential 2D thermoelectric materials ATeI (A=Sb and Bi) monolayers from a first-principles study
Cited by in corpus (8)
- Exceptional piezoelectricity, high thermal conductivity and stiffness and promising photocatalysis in two-dimensional MoSi2N4 family confirmed by first-principles
- Coexistence of intrinsic piezoelectricity and ferromagnetism induced by small biaxial strain in septuple-atomic-layer
- As-based ternary Janus monolayers for efficient thermoelectric and photocatalytic applications
- Huge out-of-plane piezoelectric response in ferromagnetic monolayer NiClI
- Outstandingly high thermal conductivity, elastic modulus, carrier mobility and piezoelectricity in two-dimensional semiconducting CrC2N4: A first-principles study
- Intrinsic piezoelectric ferromagnetism with large out-of-plane piezoelectric response in Janus monolayer
- Janus monolayer ScXY (XY=Cl, Br and I) for piezoelectric and valleytronic application: a first-principle prediction
- On the structure of SbTeI