Heating of a trapped ion induced by dielectric materials

Abstract

Electric-field noise due to surfaces disturbs the motion of nearby trapped ions, compromising the fidelity of gate operations that are the basis for quantum computing algorithms. We present a method that predicts the effect of dielectric materials on the ion's motion. Such dielectrics are integral components of ion traps. Quantitative agreement is found between a model with no free parameters and measurements of a trapped ion in proximity to dielectric mirrors. We expect that this approach can be used to optimize the design of ion-trap-based quantum computers and network nodes.

References in corpus (5)

• Quantum computing with trapped ions
• A single ion coupled to an optical fiber cavity
• A stable fiber-based Fabry-Perot cavity
• Efficient Fiber Optic Detection of Trapped Ion Fluorescence
• Surface-electrode ion trap with integrated light source

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