Reliability and entropy production in non-equilibrium electronic memories
arXiv:2103.01184 · doi:10.1103/PhysRevE.105.034107
Abstract
We find the relation between reliability and entropy production in a realistic model of electronic memory (low-power MOS-based SRAM) where logical values are encoded as metastable non-equilibrium states. We employ large deviations techniques to obtain an analytical expression for the bistable quasipotential describing the non-equilibrium steady state and use it to derive an explicit expression bounding the error rate of the memory. Our results go beyond the dominant contribution given by classical instanton theory and provide accurate estimates of the error rate as confirmed by comparison with stochastic simulations. The methods developed can be adapted to study the reliability of broad classes of nonlinear devices subjected to thermal noise.
Minor corrections and updates
References in corpus (5)
- The large deviation approach to statistical mechanics
- Stochastic Thermodynamics of Non-Linear Electronic Circuits: A Realistic Framework for Computing around kT
- Local detailed balance across scales: from diffusions to jump processes and beyond
- Probabilistic Circuits for Autonomous Learning: A simulation study
- A large deviation theory perspective on nanoscale transport phenomena
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