Reliability and entropy production in non-equilibrium electronic memories

Abstract

We find the relation between reliability and entropy production in a realistic model of electronic memory (low-power MOS-based SRAM) where logical values are encoded as metastable non-equilibrium states. We employ large deviations techniques to obtain an analytical expression for the bistable quasipotential describing the non-equilibrium steady state and use it to derive an explicit expression bounding the error rate of the memory. Our results go beyond the dominant contribution given by classical instanton theory and provide accurate estimates of the error rate as confirmed by comparison with stochastic simulations. The methods developed can be adapted to study the reliability of broad classes of nonlinear devices subjected to thermal noise.

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• Methods and Conversations in (Post)Modern Thermodynamics
• Landauer Principle and Thermodynamics of Computation
• A Maxwell demon that can work at macroscopic scales
• Effective estimation of entropy production with lacking data
• Variance sum rule: proofs and solvable models
• Stochastic thermodynamic bounds on logical circuit operation
• Noise-dissipation relation for nonlinear electronic circuits
• Ergodicity Breaking and Scaling Relations for Finite-Time First-Order Phase Transition
• Thermodynamic Constraints in Dynamic Random-Access Memory Cells: Experimental Verification of Energy Efficiency Limits in Information Erasure
• Optimal control of bit erasure in stochastic random access memory