Room-temperature bipolar valleytronic transistor in MoS2/WSe2 heterostructures
arXiv:2102.03756 · doi:10.1038/s41928-021-00686-7
Abstract
Valley degree of freedom in the 2D semiconductor is a promising platform for the next generation optoelectronics. Electrons in different valleys can have opposite Berry curvature, leading to the valley Hall effect (VHE). However, VHE without the plasmonic structure's assistance has only been reported in cryogenic temperature, limiting its practical application. Here, we report the observation of VHE at room temperature in the MoS2/WSe2 heterostructures. We also uncover that both the magnitude and the polarity of the VHE in the 2D heterostructure is gate tunable. We attribute this to the opposite VHE contribution from the electron and hole in different layers. These results indicate the bipolar transport nature of our valleytronic transistor. Utilizing this gate tunability, we demonstrate a bipolar valleytronic transistor. Our results can be used to improve the ON/OFF ratio of the valleytronic transistor and to realize more versatile valleytronics logic circuits.
34 pages, 16 figures
References in corpus (8)
- Valley polarization in MoS2 monolayers by optical pumping
- Atomically thin p-n junctions with van der Waals heterointerfaces
- The Valley Hall Effect in MoS2 Transistors
- Detecting Topological Currents in Graphene Superlattices
- Robust optical emission polarization in MoS2 monolayers through selective valley excitation
- Spectroscopic studies of atomic defects and bandgap renormalization in semiconducting monolayer transition metal dichalcogenides
- Microscopic Origin of the Valley Hall Effect in Transition Metal Dichalcogenides Revealed by Wavelength Dependent Mapping
- Circular photogalvanic effect in 2D van der Waals heterostructure
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