Micrometer-scale monolayer SnS growth by physical vapor deposition
arXiv:2012.01137 · doi:10.1039/d0nr06022d
Abstract
Recently, monolayer SnS, a two-dimensional group IV monochalcogenide, was grown on a mica substrate at the micrometer-size scale by the simple physical vapor deposition (PVD), resulting in the successful demonstration of its in-plane room temperature ferroelectricity. However, the reason behind the monolayer growth remains unclear because it had been considered that the SnS growth inevitably results in a multilayer thickness due to the strong interlayer interaction arising from lone pair electrons. Here, we investigate the PVD growth of monolayer SnS from two different feed powders, highly purified SnS and commercial phase-impure SnS. Contrary to expectations, it is suggested that the mica substrate surface is modified by sulfur evaporated from the Sn2S3 contaminant in the as-purchased powder and the lateral growth of monolayer SnS is facilitated due to the enhanced surface diffusion of SnS precursor molecules, unlike the growth from the highly purified powder. This insight provides a guide to identify further controllable growth conditions.
References in corpus (9)
- Black phosphorus field-effect transistors
- Two-dimensional materials from high-throughput computational exfoliation of experimentally known compounds
- Giant Piezoelectricity in Monolayer Group IV Monochalcogenides: SnSe, SnS, GeSe and GeS
- Robust Ferroelectricity in Monolayer Group-IV Monochalcogenides
- Purely in-plane ferroelectricity in monolayer SnS at room temperature
- Screening limited switching performance of multilayer 2D semiconductor FETs: the case for SnS
- Ferroelectricity and piezoelectricity in monolayers and nanoplatelets of SnS
- Influence of interface dipole layers on the performance of graphene field effect transistors
- Crystal orientation relation and macroscopic surface roughness in hetero-epitaxially grown graphene on Cu/mica