Shift current conductivity in monolayer SnS: a tight-binding analysis
arXiv:2606.02851 · doi:10.7566/JPSJ.95.074802
Abstract
We investigate the bulk photovoltaic effect in monolayer SnS using an effective tight-binding model derived from first-principles calculations. By comparing short-range and long-range hopping models, we show that the essential features of the shift current conductivity are captured by a minimal model. The shift current is decomposed into transition intensity and shift vector, enabling identification of dominant interband transitions. The comparison reveals that long-range hopping processes quantitatively modify the peak positions and magnitudes, while the short-range model retains the characteristic low-energy structure of the nonlinear response. Our findings provide a transparent framework for understanding and designing bulk photovoltaic effects in two-dimensional materials.
12 pages; 10 figures
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