Custom silicon technology for SPAD-arrays with red-enhanced sensitivity and low timing jitter
arXiv:2009.06728 · doi:10.1364/OE.413821
Abstract
Single-photon detection is an invaluable tool for many applications ranging from basic research to consumer electronics. In this respect, the Single Photon Avalanche Diode (SPAD) plays a key role in enabling a broad diffusion of these techniques thanks to its remarkable performance, room-temperature operation, and scalability. In this paper we present a silicon technology that allows the fabrication of SPAD-arrays with an unprecedented combination of low timing jitter (95 ps FWHM) and high detection efficiency at red and near infrared wavelengths (peak of 70% at 650 nm, 45% at 800 nm). We discuss the device structure, the fabrication process, and we present a thorough experimental characterization of the fabricated detectors. We think that these long-awaited results can pave the way to new exciting developments in many fields, ranging from quantum optics to single molecule spectroscopy
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Cited by in corpus (4)
- A Near-Infrared Enhanced Silicon Single-Photon Avalanche Diode with a Spherically Uniform Electric Field Peak
- A Backside-Illuminated Charge-Focusing Silicon SPAD with Enhanced Near-Infrared Sensitivity
- Laser-written reconfigurable photonic integrated circuit directly coupled to a single-photon avalanche diode array
- A quantum-enhanced wide-field phase imager