Two phase transitions driven by surface electron-doping in WTe${}_2$

Abstract

WTe${}_2$ is a multifunctional quantum material exhibiting numerous emergent phases in which tuning of the carrier density plays an important role. Here we demonstrate two non-monotonic changes in the electronic structure of WTe${}_2$ upon \textit{in-situ} electron doping. The first phase transition is interpreted in terms of a shear displacement of the top WTe${}_2$ layer, which realizes a local crystal structure not normally found in bulk WTe${}_2$. The second phase transition is associated with stronger interactions between the dopant atoms and the host, both through hybridization and electric field. These results demonstrate that electron-doping can drive structural and electronics changes in bulk WTe${}_2$ with implications for realizing nontrivial band structure changes in heterointerfaces and devices.

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Cited by in corpus (6)

• Electronic structure and topology across $T_c$ in magnetic Weyl semimetal Co${}_3$Sn${}_2$S${}_2$
• Terahertz control of surface topology probed with subatomic resolution
• Geometry-induced spin-filtering in photoemission maps from WTe${}_2$ surface states
• Quantum spin Hall states in the lateral heteromonolayers of WTe2-MoTe2
• Ultrafast Carrier Dynamics in Two-Dimensional Electron Gas-Like K-doped MoS2
• Electronic properties of the steps in bilayer Td-WTe2