Magnetic Properties and Electronic Structure of Magnetic Topological Insulator MnBiSe
arXiv:2003.07938 · doi:10.1021/acs.nanolett.1c00141
Abstract
The intrinsic magnetic topological insulators MnBiX (X = Se, Te) are promising candidates in realizing various novel topological states related to symmetry breaking by magnetic order. Although much progress had been made in MnBiTe, the study of MnBiSe has been lacking due to the difficulty of material synthesis of the desired trigonal phase. Here, we report the synthesis of multilayer trigonal MnBiSe with alternating-layer molecular beam epitaxy. Atomic-resolution scanning transmission electron microscopy (STEM) and scanning tunneling microscopy (STM) identify a well-ordered multilayer van der Waals (vdW) crystal with septuple-layer base units in agreement with the trigonal structure. Systematic thickness-dependent magnetometry studies illustrate the layered antiferromagnetic ordering as predicted by theory. Angle-resolved photoemission spectroscopy (ARPES) reveals the gapless Dirac-like surface state of MnBiSe, which demonstrates that MnBiSe is a topological insulator above the magnetic ordering temperature. These systematic studies show that MnBiSe is a promising candidate for exploring the rich topological phases of layered antiferromagnetic topological insulators.
20 pages, 9 figures
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