Strain Engineering of Spin and Rashba properties in Group-III Monochalcogenide MX (M=Ga, In and X=S, Se, Te) Monolayer

Abstract

In this paper, spin properties of monolayer MX (M=Ga, In and X=S, Se, Te) in the presence of strain are studied. Density functional theory is used to investigate spin properties. The strain changes modification of bandgap due to spin-orbit coupling, the results indicate the spin-orbit coupling has a higher effect in the compressive regime. Also, spin splitting in the conduction and valence bands respect to strain are compared for six materials. The location of conduction band minimum (CBM) imposed a type of spin properties. These materials with mirror symmetry can display the Rashba effect while M valley is located at CBM. Strain tunes the conduction band minimum in three valleys (K, M and $\Gamma$ valleys) and determines which spin effect (spin splitting, Rashba splitting or no spin splitting) has occurred in each strain for every material. Lastly, the relation between the Rashba parameter and the atomic mass is explored and it is observed that there is a linear correlation between atomic mass and Rashba coefficient.

References in corpus (20)

• Quantum ESPRESSO: a modular and open-source software project for quantum simulations of materials
• Restoring the density-gradient expansion for exchange in solids and surfaces
• Generalized gradient approximation for solids and their surfaces
• Spintronics: Fundamentals and applications
• Intrinsic and Rashba Spin-orbit Interactions in Graphene Sheets
• Giant Spin-splitting in the Bi/Ag(111) Surface Alloy
• Hidden spin polarization in inversion-symmetric bulk crystals
• Spin-Orbit Proximity Effect in Graphene
• Manipulation of the large Rashba spin splitting in polar two-dimensional transition metal dichalcogenides
• Direct observation of spin-polarised bulk bands in an inversion-symmetric semiconductor
• All-electric all-semiconductor spin field effect transistors
• Strongly spin-orbit coupled two-dimensional electron gas emerging near the surface of polar semiconductors
• Emergence of ferroelectricity and spin-valley properties in two-dimensional honeycomb binary compounds
• Crystal Field Effect Induced Topological Crystalline Insulators In Monolayer IV-VI Semiconductors
• The Structural Influence on the Rashba-type Spin-Splitting in Surface Alloys
• Datta-Das type spin-field effect transistor in non-ballistic regime
• Effect of gate-driven spin resonance on the conductance of a one-dimensional quantum wire
• Layered Topological Crystalline Insulators
• Spin control in semiconductor quantum wires
• Rashba spin orbit interaction in a quantum wire superlattice

Cited by in corpus (3)

• Vertical Strain-Induced Modification of the Electrical and Spin Properties of Monolayer MoSi2X4 (X= N, P, As and Sb)
• The Electrical and Spin Properties of Monolayer and Bilayer Janus HfSSe under Vertical Electrical Field
• Coulomb drag in metal monochalcogenides double-layer structures with Mexican-hat band dispersions