Correlation between crystal purity and the charge density wave in 1-VSe
arXiv:2001.08020 · doi:10.1103/PhysRevMaterials.4.025002
Abstract
We examine the charge density wave (CDW) properties of 1-VSe crystals grown by chemical vapour transport (CVT) under varying conditions. Specifically, we find that by lowering the growth temperature ( 630C), there is a significant increase in both the CDW transition temperature and the residual resistance ratio (RRR) obtained from electrical transport measurements. Using x-ray photoelectron spectroscopy (XPS), we correlate the observed CDW properties with stoichiometry and the nature of defects. In addition, we have optimized a method to grow ultra-high purity 1-VSe crystals with a CDW transition temperature, = (112.7 0.8) K and maximum residual resistance ratio (RRR) 49, which is the highest reported thus far. This work highlights the sensitivity of the CDW in 1-VSe to defects and overall stoichiometry, and the importance of controlling the crystal growth conditions of strongly-correlated transition metal dichalcogenides.
14 pages, 11 figures
References in corpus (5)
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- Molecular beam epitaxy growth and scanning tunneling microscopy study of TiSe ultrathin films
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- Anomalous amplitude mode dynamics below the expected charge-density-wave transition in 1-VSe
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