Single photon emission from droplet epitaxial quantum dots in the standard telecom window around a wavelength of 1.55 $\mu$m

Abstract

We study the luminescence dynamics of telecom wavelength InAs quantum dots grown on InP(111)A by droplet epitaxy. The use of the ternary alloy InAlGaAs as a barrier material leads to photon emission in the 1.55 $\mu$m telecom C-band. The luminescence decay is well described in terms of the theoretical interband transition strength without the impact of nonradiative recombination. The intensity autocorrelation function shows clear anti-bunching photon statistics. The results suggest that our quantum dots are useful for constructing a practical source of single photons and quantum entangled photon pairs.

4 pages

References in corpus (5)

• Droplet Epitaxy of Semiconductor Nanostructures for Quantum Photonic Devices
• Fast Purcell-enhanced single photon source in 1,550-nm telecom band from a resonant quantum dot-cavity coupling
• Photon correlation in GaAs self-assembled quantum dots
• Wavelength extension beyond 1.5 micrometer in symmetric InAs quantum dots on InP(111)A using droplet epitaxy
• Fiber-coupled pillar array as a highly pure and stable single-photon source

Cited by in corpus (2)

• Telecom-wavelength InAs QDs with low fine structure splitting grown by droplet epitaxy on GaAs(111)A vicinal substrates
• Reentrant behavior of the density vs temperature of indium islands on GaAs(111)A