Reducing the impact of bulk doping on transport properties of Bi-based 3D topological insulators

Abstract

The observation of helical surface states in Bi-based three-dimensional topological insulators has been a challenge since their theoretical prediction. The main issue raises when the Fermi level shifts deep into the bulk conduction band due to the unintentional doping. This results in a metallic conduction of the bulk which dominates the transport measurements and hinders the probing of the surface states in these experiments. In this study, we investigate various strategies to reduce the residual doping in Bi-based topological insulators. Flakes of Bi${}_2$Se${}_3$ and Bi${}_{1.5}$Sb${}_{0.5}$Te${}_{1.7}$Se${}_{1.3}$ are grown by physical vapor deposition and their structural and electronic properties are compared to mechanically exfoliated flakes. Using Raman spectroscopy, we explore the role of the substrate in this process and present the optimal conditions for the fabrication of high quality crystals. Despite of this improvement, we show that the vapor phase deposited flakes still suffer from structural disorder which leads to the residual n-type doping of the bulk. Using magneto-measurements we show that exfoliated flakes have better electrical properties and are thus more promising for the probing of surface states.

7 pages, 7 figures

References in corpus (10)

• Quantum Spin Hall Insulator State in HgTe Quantum Wells
• STM Spectroscopy of ultra-flat graphene on hexagonal boron nitride
• Topological origin of subgap conductance in insulating bilayer graphene
• Two-dimensional Dirac fermions in a topological insulator: transport in the quantum limit
• Observation of Dirac Holes and Electrons in a Topological Insulator
• Topological Surface States and Dirac point tuning in ternary Bi2Te2Se class of topological insulators
• Growth of High-Mobility Bi2Te2Se Nanoplatelets on hBN Sheets by van der Waals Epitaxy
• Spin-Charge Locking and Tunneling into a Helical Metal
• Floquet topological insulator laser
• Van der Waals epitaxial growth of topological insulator Bi${}_{2-x}$Sb${}_x$Te${}_{3-y}$Se${}_y$ ultrathin nanoplate on electrically insulating fluorophlogopite mica

Cited by in corpus (1)

• Non-linear hybrid surface-defect states in defective Bi${}_2$Se${}_3$