Valley polarization and valleyresistance in monolayer transition metal dichalcogenides superlattice
arXiv:2001.02355 · doi:10.1021/acs.jpclett.0c00863
Abstract
Manipulating the valley degree of freedom to encode information for potential valleytronic devices has ignited a new direction in solid-state physics. A significant, fundamental challenge in the field of valleytronics is how to generate and regulate valley-polarized currents by practical ways. Here, we discover a new mechanism of producing valley polarization in a monolayer transition metal dichalcogenides superlattice, in which valley-resolved gaps are formed at the supercell Brillouin zone boundaries and centers due to the intervalley scattering. When the energy of the incident electron is in the gaps, the available states are valley polarized, thus providing a valley-polarized current from the superlattice. We show that the direction and strength of the valley polarization may further be tuned by varying the potential applied the superlattice. The transmission can have a net valley polarization of 55% for a 4-period heterojunction. Moreover, such two valley filters in series may function as an electrostatically controlled giant valleyresistance device, representing a zero magnetic field counterpart to the familiar giant magnetoresistance device.
arXiv comment14 pages, 4 figures
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