Intrinsic and Extrinsic Defect-related Excitons in TMDCs
arXiv:1912.12327 · doi:10.1021/acs.nanolett.9b05323
Abstract
We investigate an excitonic peak appearing in low-temperature photoluminescence of monolayer transition metal dichalcogenides (TMDCs), which is commonly associated with defects and disorder. First, to uncover the intrinsic origin of defect-related excitons, we study their dependence on gate voltage, excitation power, and temperature in a prototypical TMDC monolayer, . We show that the entire range of behaviors of defect-related excitons can be understood in terms of a simple model, where neutral excitons are bound to ionized donor levels, likely related to sulphur vacancies, with a density of . Second, to study the extrinsic origin of defect-related excitons, we controllably deposit oxygen molecules in-situ onto the surface of kept at cryogenic temperature. We find that in addition to trivial p-doping of , oxygen affects the formation of defect-related excitons by functionalizing the vacancy. Combined, our results uncover the origin of defect-related excitons, suggest a simple and conclusive approach to track the functionalization of TMDCs, benchmark device quality, and pave the way towards exciton engineering in hybrid organic-inorganic TMDC devices.
arXiv comment15 pages, 4 figures, including Supplementary information with 6 pages and 5 figures
References in corpus (25)
- Atomically thin MoS2: A new direct-gap semiconductor
- Control of valley polarization in monolayer MoS2 by optical helicity
- Observation of tightly bound trions in monolayer MoS2
- Exciton Binding Energy and Nonhydrogenic Rydberg Series in Monolayer WS2
- Observation of giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor
- Electrical Control of Two-Dimensional Neutral and Charged Excitons in a Monolayer Semiconductor
- Tunable Photoluminescence of Monolayer MoS2 via Chemical Doping
- Hopping Transport through Defect-induced Localized States in Molybdenum Disulfide
- Two-dimensional transition metal dichalcogenides under electron irradiation: defect production and doping
- Valley Dependent Optoelectronics from Inversion Symmetry Breaking
- Exciton physics and device application of two-dimensional transition metal dichalcogenide semiconductors
- Excitonic linewidth and coherence lifetime in monolayer transition metal dichalcogenides
- Exciton Radiative Lifetime in Transition Metal Dichalcogenide Monolayers
- Valley excitons in two-dimensional semiconductors
- Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides with experiment and theory
- Chemically Tailoring Semiconducting Two-Dimensional Transition Metal Dichalcogenides and Black Phosphorus
- Post Graphene 2D Chemistry: The Emerging Field of Molybdenum Disulfide and Black Phosphorus Functionalization
- Radiative Lifetimes of Excitons and Trions in Monolayers of Metal Dichalcogenide MoS2
- Dissociation of two-dimensional excitons in monolayer WSe2
- Microsecond Valley Lifetime of Defect-Bound Excitons in Monolayer WSe
- Defect-induced modification of low-lying excitons and valley selectivity in monolayer transition metal dichalcogenides
- Transition-metal dichalcogenide bilayers: switching materials for spin- and valleytronic applications
- Robust valley polarization of helium ion modified atomically thin MoS
- Functionalization of Single Layer MoS Honeycomb Structures
- Properties of Individual Dopant Atoms in Single-Layer MoS2: Atomic Structure, Migration, and Enhanced Reactivity
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- Enhanced Light-Matter Interaction in Two-Dimensional Transition Metal Dichalcogenides
- Strain control of hybridization between dark and localized excitons in a 2D semiconductor
- Spin/valley coupled dynamics of electrons and holes at the interface
- Ultrafast photocurrents in MoSe probed by terahertz spectroscopy
- Extrinsic localized excitons in patterned 2D semiconductors
- Photoluminescence and charge transfer in the prototypical 2D/3D semiconductor heterostructure MoS/GaAs
- Nonlocal Exciton-Photon Interactions in Hybrid High-Q Beam Nanocavities with Encapsulated MoS Monolayers
- Bound excitons and bandgap engineering in violet phosphorus
- Sublattice dependence and gate-tunability of midgap and resonant states induced by native dopants in Bernal-stacked bilayer graphene
- Nonclassical Light from Exciton Interactions in a Two-Dimensional Quantum Mirror
- Phonon-mediated exciton capture in Mo-based transition metal dichalcogenides
- Motion of 2D exciton in momentum space leads to pseudospin distribution narrowing on the Bloch Sphere
- Angular Emission Properties of Strained Transition-Metal Dichalcogenides