Magnetic polaron and antiferro-ferromagnetic transition in doped bilayer CrI${}_3$

Abstract

Gate-induced magnetic switching in bilayer CrI${}_3$ has opened new ways for the design of novel low-power magnetic memories based on van der Waals heterostructures. The proposed switching mechanism seems to be fully dominated by electrostatic doping. Here we explain, by first-principle calculations, the ferromagnetic transition in doped bilayer CrI${}_3$. For the case of a very small electron doping, our calculations predict the formation of magnetic polarons ("ferrons", "fluctuons") where the electron is self-locked in a ferromagnetic droplet in an antiferromagnetic insulating matrix. The self-trapping of holes is impossible, at least, within our approximation.

5 pages, 5 figures

References in corpus (4)

• Quantum ESPRESSO: a modular and open-source software project for quantum simulations of materials
• Magnetic 2D materials and heterostructures
• Probing magnetism in 2D materials at the nanoscale with single spin microscopy
• Electron self-trapping at quantum and classical critical points

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