Engineering of the topological magnetic moment of electrons in bilayer graphene using strain and electrical bias

Abstract

Topological properties of electronic states in multivalley two-dimensional materials, such as mono- and bilayer graphene, or thin films of rhombohedral graphite, give rise to various unusual magneto-transport regimes. Here, we investigate the tunability of the topological magnetic moment (related to the Berry curvature) of electronic states in bilayer graphene using strain and vertical bias. We show how one can controllably vary the valley $g$-factor of the band-edge electrons, $g_v^{\ast }$, across the range $10<|g_v^{\ast }|<200$, and we discuss the manifestations of the topological magnetic moment in the anomalous contribution towards the Hall conductivity and in the Landau level spectrum.

arXiv comment6 pages, 5 figures

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• Probing two-electron multiplets in bilayer graphene quantum dots
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• Theory of tunneling spectra for a few-electron bilayer graphene quantum dot
• Quantum nonlinear planar Hall effect in bilayer graphene: an orbital effect of a steady in-plane magnetic field
• Atomic configuration controlled photocurrent in van der Waals homostructures
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• Kagomé network of chiral miniband-edge states in double-aligned graphene-hexagonal boron nitride structures
• Pauli blockade catalogue and three- and four-particle Kondo effect in bilayer graphene quantum dots
• Extended Hubbard model describing small multi-dot arrays in bilayer graphene
• Electrically tunable and reversible magnetoelectric coupling in strained bilayer graphene
• Impact of competing energy scales on the shell-filling sequence in elliptic bilayer graphene quantum dots
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• Quantum Transport Straintronics and Mechanical Aharonov-Bohm Effect in Quasi-metallic SWCNTs
• Probing valley phenomena with gate-defined valley splitters
• Direct driving of electronic and phononic degrees of freedom in a honeycomb bilayer with infrared light
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• Straintronics and twistronics in bilayer graphene
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