Topological resonance and single-optical-cycle valley polarization in gapped graphene

Abstract

For gapped graphene, we predict that an intense ultrashort (single-oscillation) circularly-polarized optical pulse can induce a large population of the conduction band and a large valley polarization. With an increase in the bandgap, the magnitude of the valley polarization gradually increases from zero (for the native gapless graphene) to a value on the order of unity. The energy bandwidth of the electrons excited into the conduction band can be very large ($\gtrsim 10$ eV for a reasonable pulse amplitude of $\sim 0.5$ $V/\mathring{\mathrm{A}}$). These phenomena are due to the effect of topological resonance: the matching of the topological (geometric) phase and the dynamic phase. Gapped graphene with tunable bandgap can be used as a convenient generic model of two-dimensional semiconductors with honeycomb generic lattice structures and broken inversion symmetry, such as transition metal dichalcogenides.

References in corpus (27)

• The electronic properties of graphene
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• Berry Phase Effects on Electronic Properties
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• Valley filter and valley valve in graphene
• Valley Dependent Optoelectronics from Inversion Symmetry Breaking
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Cited by in corpus (16)

• Light-Induced Valleytronics in Pristine Graphene
• All-Optical Ultrafast Valley Switching in Two-Dimensional Materials
• Experimental generation of circulating cavity magnon polaritons
• Adiabaticity parameters for the categorization of light-matter interaction -- from weak to strong driving
• Intense-pulse dynamics of massless Dirac electrons
• Valley polarization control in WSe2 monolayer by a single-cycle laser pulse
• Topological resonance in Weyl semimetals in circularly-polarized optical pulse
• Subcycle control of valley-selective excitation via dynamical Franz-Keldysh effect in WSe${}_2$ monolayer
• Ultrafast valley polarization in bilayer graphene
• Femtosecond currents in transition metal dichalcogenides monolayers
• Bilayer graphene in strong ultrafast laser fields
• Graphene valley polarization as a function of carrier-envelope phase in few-cycle laser pulses and its footprints in harmonic signals
• Origins of Valley Current Reversal in Partially Overlapped Graphene Layers
• Ultrafast strong-field absorption in gapped graphene
• Energy symmetry and interlayer wave function ratio of tunneling electrons in partially overlapped graphene
• Tunnel Valley Current Filter in the Partially Overlapped Graphene under the Vertical Electric Field