Artificial Spin Ice Phase-Change Memory Resistors
arXiv:1908.08073 · doi:10.1088/1367-2630/ac4c0a
Abstract
We study the implications of the anisotropic magnetic resistance on permalloy nanowires, and in particular on the property of the resistance depending on the type of lattice. We discuss how the internal spin configuration of artificial spin ice nanowires can affect their effective resistive state, and which mechanisms can introduce a current-dependent effect dynamic resistive state. We discuss a spin-induced thermal phase-change mechanism, and an athermal domain-wall spin inversion. In both cases we observe memory behavior reminiscent of a memristor, with an I-V hysteretic pinched behavior.
5 pages double column + 9 supplementary material single column
References in corpus (12)
- Artificial "spin ice" in a geometrically frustrated lattice of nanoscale ferromagnetic islands
- Direct observation of the ice rule in artificial kagome spin ice
- Memcomputing: a computing paradigm to store and process information on the same physical platform
- Spectral analysis of topological defects in an artificial spin-ice lattice
- Ground state lost but degeneracy found: the effective thermodynamics of artificial spin ice
- Memcomputing NP-complete problems in polynomial time using polynomial resources and collective states
- Direct entropy determination and application to artificial spin ice
- The complex dynamics of memristive circuits: analytical results and universal slow relaxation
- Understanding magnetotransport signatures in networks of connected permalloy nanowires
- Defect Dynamics in Artificial Colloidal Ice: Real-Time Observation, Manipulation and Logic Gate
- Geometric Frustration of Colloidal Dimers on a Honeycomb Magnetic Lattice
- Theory of magnetotransport in artificial kagome spin ice