Tunable Coupling between Surface States of a Three-Dimensional Topological Insulator in the Quantum Hall Regime

Abstract

The paired top and bottom Dirac surface states, each associated with a half-integer quantum Hall (QH) effect, and a resultant integer QH conductance (νe2/h), are hallmarks of a three-dimensional (3D) topological insulator (TI). In a dual-gated system, chemical potentials of the paired surface states are controlled through separate gates. In this work, we establish tunable capacitive coupling between the surface states of a bulk-insulating TI BiSbTeSe2 and study the effect of this coupling on QH plateaus and Landau level (LL) fan diagram via dual-gate control. We observe non-linear QH transitions at low charge density in strongly-coupled surface states, which are related to the charge-density-dependent coupling strength. A splitting of the N= 0 LL at the charge neutrality point for thin devices (but thicker than the 2D limit) indicates inter-surface hybridization possibly beyond single-particle effects. By applying capacitor charging models to the surface states, we explore their chemical potential as a function of charge density and extract the fundamental electronic quantity of LL energy gaps from dual-gated transport and capacitance measurements. These studies are essential for the realization of exotic quantum effects such as topological exciton condensation.

arXiv comment15 pages, 3 figures

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• Coupling-decoupling of conducting topological surface states in thick Bi${}_2$Se${}_3$ single crystals
• Signature of Parity Anomaly: Crossover from One Half to Integer Quantized Hall Conductance in a Finite Magnetic Field
• 2D-Dirac surface states and bulk gap probed via quantum capacitance in a 3D topological insulator
• Large Magnetoresistance in Topological Insulator Candidate TaSe3
• Resistively detected NMR as a probe of the topological nature of conducting edge/surface states
• Observation of the surface hybridization gap in the electrical transport properties of the ultrathin topological insulator (Bi${}_{1-x}$Sb${}_x$)${}_2$Te${}_3$
• Distinct topological excitonic insulators characterized by quantum geometry
• Influence of Device Geometry on Transport Properties of Topological Insulator Microflakes
• Gate-tunable anomalous Hall effect in stacked van der Waals ferromagnetic insulator - topological insulator heterostructures