Rigid band shifts in two-dimensional semiconductors through environmental screening
arXiv:1907.05535 · doi:10.1103/PhysRevLett.123.206403
Abstract
We investigate the effects of environmental dielectric screening on the electronic dispersion and the band gap in the atomically-thin, quasi two-dimensional (2D) semiconductor WS using correlative angle-resolved photoemission and optical spectroscopies, along with first-principles calculations. We find the main effect of increased environmental screening to be a reduction of the band gap, with little change to the electronic dispersion of the band structure. These essentially rigid shifts of the bands results from the special spatial structure of the changes in the Coulomb potential induced by the dielectric environment in the 2D limit. Our results suggest dielectric engineering as a non-invasive method of tailoring the band structure of 2D semiconductors and provide guidance for understanding the electronic properties of 2D materials embedded in multilayer heterostructures.
arXiv comment5 pages, 3 figures
References in corpus (23)
- Wannier90: A Tool for Obtaining Maximally-Localised Wannier Functions
- Observation of tightly bound trions in monolayer MoS2
- Exciton Binding Energy and Nonhydrogenic Rydberg Series in Monolayer WS2
- Bandgap Engineering of Strained Monolayer and Bilayer MoS2
- Excitons in atomically thin transition metal dichalcogenides
- Observation of giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor
- Optical Spectrum of MoS: Many-body Effects and Diversity of Exciton States
- The Computational 2D Materials Database: High-Throughput Modeling and Discovery of Atomically Thin Crystals
- Tightly bound excitons in monolayer WSe2
- Probing Excitonic Dark States in Single-layer Tungsten Disulfide
- Three-band tight-binding model for monolayers of group-VIB transition metal dichalcogenides
- Theory of Neutral and Charged Excitons in Monolayer Transition Metal Dichalcogenides
- Renormalization of Molecular Electronic Levels at Metal-Molecule Interfaces
- Dielectric screening in two-dimensional insulators: Implications for excitonic and impurity states in graphane
- Optimal Hubbard models for materials with nonlocal Coulomb interactions: graphene, silicene and benzene
- Probing the influence of dielectric environment on excitons in monolayer WSe2: Insight from high magnetic fields
- The dielectric genome of van der Waals heterostructures
- Renormalization of Molecular Quasiparticle Levels at Metal-Molecule Interfaces: Trends Across Binding Regimes
- Environmentally-Sensitive Theory of Electronic and Optical Transitions in Atomically-Thin Semiconductors
- Giant spin-splitting and gap renormalization driven by trions in single-layer WS/h-BN heterostructures
- Wannier Function Approach to Realistic Coulomb Interactions in Layered Materials and Heterostructures
- Electronic Excitations from a Perturbative LDA+GdW Approach
- Nanoscale patterning of quasiparticle band alignment
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- Variation of the fundamental band gap nature in curved two-dimensional WS2
- Guide to optical spectroscopy of layered semiconductors
- Control of electron-electron interaction in graphene by proximity screening
- Terahertz phonon engineering with van der Waals heterostructures
- Tuning the magnetic anisotropy and topological phase with electronic correlation in single-layer H-FeBr
- Coexisting charge density wave and ferromagnetic instabilities in monolayer InSe
- Ionic Gate Spectroscopy of 2D Semiconductors
- Dark exciton-exciton annihilation in monolayer WSe
- Dark-exciton driven energy funneling into dielectric inhomogeneities in two-dimensional semiconductors
- Tailoring the dielectric screening in WS-graphene heterostructures
- Coulomb-Engineered Heterojunctions and Dynamical Screening in Transition Metal Dichalcogenide Monolayers
- GW band structure of monolayer MoS2 using the SternheimerGW method and effect of dielectric environment
- Generalized scaling law for exciton binding energy in two-dimensional materials
- Microscopic theory of exciton and trion polaritons in doped monolayers of transition metal dichalcogenides
- Impacts of dielectric screening on the luminescence of monolayer WSe
- Anisotropic Electron-Photon-Phonon Coupling in Layered MoS2
- Phonon signatures in spectra of exciton polaritons in transition metal dichalcogenides
- Coulomb Engineering of two-dimensional Mott materials
- Substrate Effect on Excitonic Shift and Radiative Lifetime of Two-Dimensional Materials
- Valley Depolarization in Monolayer Transition-Metal Dichalcogenides with Zone-Corner Acoustic Phonons
- Confined monolayer Ag as a large gap 2D semiconductor and its momentum resolved excited states
- Ultrafast nano-imaging of dark excitons
- Distance dependence of the energy transfer mechanism in WS-graphene heterostructures
- Inducing a many-body topological state of matter through Coulomb-engineered local interactions
- Giant gate-tunable renormalization of spin-correlated flat-band states and bandgap in a 2D magnetic insulator
- Confined-state physics and signs of fermionization of moiré excitons in WSe/MoSe heterobilayers
- Proximity-enhanced valley Zeeman splitting at the WS/graphene interface
- Dispersing and semi-flat bands in the wide band gap two-dimensional semiconductor bilayer silicon oxide
- Controlling magnetic frustration in 1T-TaS via Coulomb engineered long-range interactions
- Two dimensional semiconductors: optical and electronic properties
- k-resolved ultrafast light-induced band renormalization in monolayer WS on graphene
- Persistence of charge ordering instability to Coulomb engineering in the excitonic insulator candidate TiSe
- Electronic structure of 2D van der Waals crystals and heterostructures investigated by spatially- and angle-resolved photoemission
- Excitons in epitaxially grown WS2 on Graphene: a nanometer-resolved EELS and DFT study
- Electrostatic control of the trion fine structure in transition metal dichalcogenide monolayers
- Quasiparticle gap renormalization driven by internal and external screening in a WS device
- Energy shifts and broadening of excitonic resonances in electrostatically-doped semiconductors
- Designable exciton mixing through layer alignment in WS-graphene heterostructures
- Indirect to direct band gap crossover in two-dimensional WS2(1-x)Se2x alloys
- Environmental Screening and Ligand-Field Effects to Magnetism in CrI Monolayer