In-plane to perpendicular magnetic anisotropy switching in heavily-Fe-doped ferromagnetic semiconductor (Ga,Fe)Sb with high Curie temperature

Abstract

We report switching of magnetic anisotropy (MA) from in-plane to perpendicular with increasing the thickness d of a (001)-oriented ferromagnetic-semiconductor (FMS) (Ga0.7,Fe0.3)Sb layer with a high Curie temperature (Tc > 320 K), using ferromagnetic resonance at room temperature. We show that the total MA energy (E) along the [001] direction changes its sign from positive (in-plane) to negative (perpendicular) with increasing d above an effective critical value \mathrm{d}_\mathrm{C}^\mathrm{*}\ ~ 42 nm. We reveal that (Ga,Fe)Sb has two-fold symmetry in the film plane. Meanwhile, in the plane perpendicular to the film including the in-plane [110] axis, the two-fold symmetry with the easy magnetization axis along [110] changes to four-fold symmetry with easy magnetization axis along <001> with increasing d. This peculiar behavior is different from that of (Ga,Mn)As, in which only the in-plane MA depends on the film thickness and has four-fold symmetry due to its dominant cubic anisotropy along the <100> axes. This work provides an important guide for controlling the easy magnetization axis of high-Tc FMS (Ga,Fe)Sb for room-temperature device applications.

References in corpus (11)

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Cited by in corpus (5)

• Doping control of magnetic anisotropy for stable antiskyrmion formation in schreibersite (Fe,Ni)${}_3$P with $S_4$ symmetry
• Microscopic mechanism of high-temperature ferromagnetism in Fe, Mn, and Cr-doped InSb, InAs, and GaSb magnetic semiconductors
• Evolution of the Fe-3$d$ impurity band state as the origin of high Curie temperature in p-type ferromagnetic semiconductor (Ga,Fe)Sb
• Growth and characterization of quaternary-alloy ferromagnetic semiconductor (In,Ga,Fe)Sb
• Current-in-plane spin-valve magnetoresistance in ferromagnetic semiconductor (Ga,Fe)Sb heterostructures with high Curie temperature