Close correlation between superconducting transition temperatures and carrier densities in Te- and S-substituted FeSe thin films

Abstract

We comparatively investigated the transport properties for S- and Te-substituted FeSe thin films under magnetic fields to clarify the origin of the contrasting behavior of the superconducting transition temperature in S and Te substitution. A classical two carrier analysis revealed that the carrier densities of the films increased with increasing Te content, while no significant change was observed for the S-substitution. This composition dependence of the carrier density well corresponds to the $T_{\mathrm{c}}$ behavior. The clear correlation between $T_{\mathrm{c}}$ and the carrier densities suggests that the structural transition affects the electronic structure in a different manner between Fe(Se,S) and Fe(Se,Te) and that this fact is the direct cause of the difference in the $T_{\mathrm{c}}$ behaviors at the end point of the structural transition.

12 pages, 4 figures

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Cited by in corpus (6)

• Electronic transport properties and hydrostatic pressure effect of FeSe${}_{0.67}$Te${}_{0.33}$ single crystals free of phase separation
• Positive and negative chemical pressure effects investigated in electron-doped FeSe films with an electric-double-layer structure
• Relationships between Superconductivity and Nematicity in FeSe${}_{1-x}$Te${}_x$ ($x=0-0.5$) Films Studied by Complex Conductivity Measurements
• In-situ electrical and thermal transport properties of FeySe1-xTex films with ionic liquid gating
• Studies of superconductivity of Fe chalcogenides in films grown by PLD technique
• Evolution of charge dynamics in FeSe${}_{1-x}$Te${}_x$: Effects of electronic correlations and nematicity