Electrical suppression of all nonradiative recombination pathways in monolayer semiconductors
arXiv:1905.03365 · doi:10.1126/science.aaw8053
Abstract
Defects in conventional semiconductors substantially lower the photoluminescence (PL) quantum yield (QY), a key metric of optoelectronic performance that directly dictates the maximum device efficiency. Two-dimensional (2D) transition metal dichalcogenides (TMDCs), such as monolayer MoS2, often exhibit low PL QY for as-processed samples, which has typically been attributed to a large native defect density. We show that the PL QY of as-processed MoS2 and WS2 monolayers reaches near-unity when they are made intrinsic by electrostatic doping, without any chemical passivation. Surprisingly, neutral exciton recombination is entirely radiative even in the presence of a high native defect density. This finding enables TMDC monolayers for optoelectronic device applications as the stringent requirement of low defect density is eased.
References in corpus (3)
Cited by in corpus (12)
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- Collective Excitations in 2D Materials
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- Defect Engineering of Two-dimensional Molybdenum Disulfide
- Harnessing Exciton-Exciton Annihilation in Two-Dimensional Semiconductors
- Tuning exciton recombination rates in doped transition metaldichalcogenides
- Controlling relaxation dynamics of excitonic states in monolayer transition metal dichalcogenides WS2 through interface engineering
- Robustness of momentum-indirect interlayer excitons in MoS2/WSe2 heterostructure against charge carrier doping
- Coupling Spin Defects in a Layered Material to Nanoscale Plasmonic Cavities
- Efficient valley polarization of charged excitons and resident carriers in MoS2 monolayers by optical pumping
- Spatially Resolved Persistent Photoconductivity in MoS-WS Lateral Heterostructures