A dynamical magnetic field accompanying the motion of ferroelectric domain walls

Abstract

The recently proposed dynamical multiferroic effect describes the generation of magnetization from temporally varying electric polarization. Here, we show that the effect can lead to a magnetic field at moving ferroelectric domain walls, where the rearrangement of ions corresponds to a rotation of ferroelectric polarization in time. We develop an expression for the dynamical magnetic field, and calculate the relevant parameters for the example of 90${}^{\circ }$ and 180${}^{\circ }$ domain walls in BaTiO${}_3$ using a combination of density functional theory and phenomenological modeling. We find that the magnetic field reaches the order of several $\mu$T at the center of the wall, and we propose two experiments to measure the effect with nitrogen-vacancy center magnetometry.

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Cited by in corpus (7)

• Dynamic electron-phonon and spin-phonon interactions due to inertia
• Large Magnetic Moment in Flexoelectronic Silicon at Room Temperature
• High temperature spectroscopy of nitrogen vacancy centers in diamond
• Evidence of magnetoelectronic electromagnon mediated transport in flexoelectronic heterostructures
• Spin-qubit Noise Spectroscopy of Magnetic Berezinskii-Kosterlitz-Thouless Physics
• Interlayer charge transfer from contact electrification in conducting micro and nanoscale thin film heterostructures
• Band topology and dynamic multiferroicity induced from dynamical Dzyaloshinskii-Moriya interactions in centrosymmetric lattices