Ultrafast band-gap renormalization and build-up of optical gain in monolayer MoTe
arXiv:1903.08553 · doi:10.1103/PhysRevB.101.075401
Abstract
The dynamics of band-gap renormalization and gain build-up in monolayer MoTe is investigated by evaluating the non-equilibrium Dirac-Bloch equations with the incoherent carrier-carrier and carrier-phonon scattering treated via quantum-Boltzmann type scattering equations. For the case where an approximately fs-long high intensity optical pulse generates charge-carrier densities in the gain regime, the strong Coulomb coupling leads to a relaxation of excited carriers on a few fs time scale. The pump-pulse generation of excited carriers induces a large band-gap renormalization during the time scale of the pulse. Efficient phonon coupling leads to a subsequent carrier thermalization within a few ps, which defines the time scale for the optical gain build-up energetically close to the low-density exciton resonance.
arXiv commentThis is a post-peer-review version of an article published in Physical Review B
References in corpus (20)
- Atomically thin MoS2: A new direct-gap semiconductor
- 2D materials and van der Waals heterostructures
- Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides
- Exciton Binding Energy and Nonhydrogenic Rydberg Series in Monolayer WS2
- Optical Spectrum of MoS: Many-body Effects and Diversity of Exciton States
- Tightly bound excitons in monolayer WSe2
- k.p theory for two-dimensional transition metal dichalcogenide semiconductors
- Probing Excitonic Dark States in Single-layer Tungsten Disulfide
- Exciton Binding Energy of Monolayer WS2
- Room-temperature Continuous-wave Lasing from Monolayer Molybdenum Ditelluride with a Silicon Nanobeam Cavity
- Absorption of Light by Excitons and Trions in Monolayers of Metal Dichalcogenide MoS: Experiments and Theory
- Vibrational and optical properties of MoS: from monolayer to bulk
- Two-dimensional Fröhlich interaction in transition-metal dichalcogenide monolayers: Theoretical modeling and first-principles calculations
- Ultrafast Band Structure Control of a Two-Dimensional Heterostructure
- Excitonic properties of semiconducting monolayer and bilayer MoTe2
- Influence of the effective layer thickness on the groundstate and excitonic properties of transition-metal dichalcogenide systems
- Optical Response and Ground State of Graphene
- Prospects and limitations of transition-metal dichalcogenide laser gain materials
- Excitation-induced transition to indirect band gaps in atomically thin transition metal dichalcogenide semiconductors
- Raman Spectroscopy of Graphene
Cited by in corpus (6)
- Valley-Polarized Quantum Anomalous Hall State in Moiré MoTe/WSe Heterobilayers
- How to obtain complex transition dipole moments satisfying crystal symmetry and periodicity from ab-initio calculations
- Massive Dirac fermions in moiré superlattices: a route towards topological flat minibands
- On the importance of electron-electron and electron-phonon scatterings and energy renormalizations during carrier relaxation in monolayer transition-metal dichalcogenides
- Phononic transport in 1T prime-MoTe2: anisotropic structure with an isotropic lattice thermal conductivity
- Optical amplification in a CDW-phase of a quasi-two dimensional material