A nonlinear, geometric Hall effect without magnetic field

Abstract

The classical Hall effect, the traditional means of determining charge-carrier sign and density in a conductor, requires a magnetic field to produce transverse voltages across a current-carrying wire. We show that along curved paths -- $\text{without}$ any magnetic field -- geometry alone can produce nonlinear transverse potentials that reflect the charge-carrier sign and density. We demonstrate this effect in curved graphene wires where the transverse potentials are consistent with the doping and change polarity as we switch the carrier sign. In straight wires, we measure transverse potential fluctuations with random polarity demonstrating that the current follows a complex, tortuous path. This geometrically-induced potential offers a sensitive characterization of inhomogeneous current flow in thin films.

22 pages, 3 figures

References in corpus (6)

• Electric Field Effect in Atomically Thin Carbon Films
• The Valley Hall Effect in MoS2 Transistors
• All-graphene integrated circuits via strain engineering
• Thermoelectric and Magnetothermoelectric Transport Measurements of Graphene
• Observation of the nonlinear Hall effect under time reversal symmetric conditions
• Current-induced cleaning of graphene

Cited by in corpus (6)

• Electronic materials with nanoscale curved geometries
• Tunable room temperature nonlinear Hall effect from the surfaces of elementary bismuth thin films
• Non-linear Transport in Non-centrosymmetric Systems: From Fundamentals to Applications
• Detection of quantum geometric tensor by nonlinear optical response
• Energy relaxation in a vacuum capacitor-resistor circuit: measurement of multiple decays with divergent time constants
• Nonlinear hydrodynamic response of a quantum Hall system