A strain tunable single-layer MoS2 photodetector
arXiv:1902.02802 · doi:10.1016/j.mattod.2019.04.019
Abstract
Strain engineering, which aims to tune the bandgap of a semiconductor by the application of strain, has emerged as an interesting way to control the electrical and optical properties of two-dimensional (2D) materials. Apart from the changes in the intrinsic properties of 2D materials, the application of strain can be also used to modify the characteristics of devices based on them. In this work, we study flexible and transparent photodetectors based on single-layer MoS2 under the application of biaxial strain. We find that by controlling the level of strain, we can tune the photoresponsivity (by 2-3 orders of magnitude), the response time (from <80 ms to 1.5 s) and the spectral bandwidth (with a gauge factor of 135 meV/% or 58 nm/%) of the device.
3 main text figures and 12 supporting information figures
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Cited by in corpus (7)
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- Giant piezoresistive effect and strong band gap tunability in ultrathin InSe upon biaxial strain
- First-Principles Mapping of the Electronic Properties of Two-Dimensional Materials for Strain-Tunable Nanoelectronics
- Local photodoping in monolayer MoS2
- Strain Engineering of Quantum Emitters in Hexagonal Boron Nitride
- Vacuum gauge from ultrathin MoS2 transistor