Extremely large magnetoresistance induced by hidden three-dimensional Dirac bands in nonmagnetic semimetal InBi

Abstract

Extremely large positive magnetoresistance (XMR) was found in a nonmagnetic semimetal InBi. Using several single crystals with different residual resistivity ratios (RRRs), we revealed that the XMR strongly depended on the RRR (sample quality). Assuming that there were no changes in effective mass m* and carrier concentrations in these single crystals, this dependence was explained by a semiclassical two-carrier model. First-principle calculations including the spin-orbit interactions (SOI) unveiled that InBi had a compensated carrier balance and SOI-induced "hidden" three-dimensional (3D) Dirac bands at the M and R points. Because the small m* and the large carrier mobilities will be realized, these hidden 3D Dirac bands should play an important role for the XMR in InBi. We suggest that this feature can be employed as a novel strategy for the creation of XMR semimetals.

arXiv comment5 pages, 4 figures, (To appear in Physical Review Materials)

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Cited by in corpus (4)

• Magnetotransport Properties and Fermi Surface Topology of Nodal line Semimetal InBi
• Materials and possible mechanisms of extremely large magnetoresistance: A review
• Non-quadratic transverse magnetoresistance of the nodal line Dirac semimetal InBi
• Study of the structural and electronic properties of semimetallic InBi: first-principles calculation of compound with peculiarities of the electronic structure