Study of the structural and electronic properties of semimetallic InBi: first-principles calculation of compound with peculiarities of the electronic structure

Abstract

The electronic properties as well as the structural characteristics and their pressure dependence of the semi-metallic $B10$-structured compound $\mathrm{InBi}$ were investigated. It is found that the structural values of $\mathrm{InBi}$ calculated in the first-principles calculations reproduce the experimental values worse than those for other heavy III-V pnictides, which are characterized by cubic $B3$ and $B2$ structures, as well as for IV-VI compounds $\mathrm{SnO}$ and $\mathrm{PbO}$ having the same $B10$ structure. The low accuracy of the first-principles calculations is a consequence of the peculiarities of the band structure inherent to $\mathrm{InBi}$ and not observed in all the other above-mentioned compounds. To improve the agreement with the experiment, it is proposed to take into account the distortion of the compensated half-metal condition at the highly symmetric points of the Brillouin zone, where the electronic and hole pockets are located.

13 pages, 9 figures, 4 tables

References in corpus (4)

• Quantum ESPRESSO: a modular and open-source software project for quantum simulations of materials
• Origin of non-linear piezoelectricity in III-V semiconductors: Internal strain and bond ionicity from hybrid-functional density functional theory
• Extremely large magnetoresistance induced by hidden three-dimensional Dirac bands in nonmagnetic semimetal InBi
• First principles prediction of structural and electronic properties of TlxIn(1-x)N alloy