Millimeter-sized magnetic domains in perpendicularly magnetized ferrimagnetic Mn4N thin films grown on SrTiO3

Abstract

The use of epitaxial layers for domain wall-based spintronic applications is often hampered by the presence of pinning sites. Here, we show that when depositing Mn4N(10 nm) epitaxial films, the replacement of MgO(001) by SrTiO3(001) substrates allows minimizing the misfit, and to obtain an improved crystalline quality, a sharper switching, a full remanence, a high anisotropy and remarkable millimeter-sized magnetic domains, with straight and smooth domain walls. In a context of rising interest for current-induced domain wall motion in rare

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Cited by in corpus (3)

• The New Nitrides: Layered, Ferroelectric, Magnetic, Metallic and Superconducting Nitrides to Boost the GaN Photonics and Electronics Eco-System
• Current-driven domain wall dynamics in ferrimagnetic Ni-doped Mn4N films : very large domain wall velocities and reversal of motion direction across the magnetic compensation point
• Positional stability of skyrmions in a racetrack memory with notched geometry