Growth and Raman spectroscopy of thickness-controlled rotationally faulted multilayer graphene

Abstract

We report the growth of thickness-controlled rotationally faulted multilayer graphene (rf-MLG) on Ni foils by low-pressure chemical vapor deposition and their characterization by micro-Raman spectroscopy. The surface morphology and thickness were investigated by scanning electron microscope, X-ray diffraction, and transmittance measurements. These results have revealed that the thickness of rf-MLG can be effectively controlled by the thickness of the Ni foil rather than the flow rate of CH${}_4$, H${}_2$, Ar. In the Raman spectroscopy measurements, we observed most Raman peaks of the graphitic materials. Raman spectra can be categorized into four patterns and show systematic behaviors. Especially, the in-plane (~1880 cm${}^{-1}$, ~2035 cm${}^{-1}$) and out-of-plane (~1750 cm${}^{-1}$) modes are successfully analyzed to explain the dimensionality of rf-MLG as in the twisted (or rotated) bilayer graphene. In addition, it is found that the two peaks at ~1230 cm${}^{-1}$ and ~2220 cm${}^{-1}$ well reflect the properties of the in-plane mode. The peak intensities of the above four in-plane modes are proportional to that of 2D band, indicating that they share the common Raman resonance process.

arXiv comment18 pages, 6 figures, to be published in Carbon

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Cited by in corpus (3)

• Wrinkling and crumpling in twisted few and multilayer CVD graphene: High density of edge modes influencing Raman spectra
• Suppression of nucleation density in twisted graphene domains grown on graphene/SiC template by sequential thermal process
• Photovoltaic Performance of a Rotationally Faulted Multilayer Graphene/n-Si Schottky Junction