The Atomic and Electronic structure of 0° and 60° grain boundaries in MoS2
arXiv:1809.00431 · doi:10.3389/fphy.2019.00059
Abstract
We have investigated atomic and electronic structure of grain boundaries in monolayer MoS2, where relative angles between two different grains are 0 and 60 degree. The grain boundaries with specific relative angle have been formed with chemical vapor deposition growth on graphite and hexagonal boron nitride flakes; van der Waals interlayer interaction between MoS2 and the flakes restricts the relative angle. Through scanning tunneling microscopy and spectroscopy measurements, we have found that the perfectly stitched structure between two different grains of MoS2 was realized in the case of the 0 degree grain boundary. We also found that even with the perfectly stitched structure, valence band maximum and conduction band minimum shows significant blue shift, which probably arise from lattice strain at the boundary.
References in corpus (11)
- Atomically thin MoS2: A new direct-gap semiconductor
- Two Dimensional Atomic Crystals
- Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides
- Synthesis of Large-Area MoS2 Atomic Layers with Chemical Vapor Deposition
- Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
- Grains and grain boundaries in highly crystalline monolayer molybdenum disulfide
- Vapor Phase Growth and Grain Boundary Structure of Molybdenum Disulfide Atomic Layers
- Electronic structures and theoretical modelling of two-dimensional group-VIB transition metal dichalcogenides
- Point Defects and Grain Boundaries in Rotationally Commensurate MoS2 on Epitaxial Graphene
- Probing the Intrinsic Optical Quality of CVD Grown MoS2
- Grain boundary-mediated nanopores in molybdenum disulfide grown by chemical vapor deposition