34 citations · 65 across the 7 of their papers we have counts for
7 papers
Intertwined bulk photocarrier and interfacial barrier dynamics in van der Waals point-contact Schottky junctions
Munenori Yokota, Hiroyuki Mogi, Yutaka Mera +6
Schottky junctions based on transition-metal dichalcogenides underpin next-generation optoelectronic devices, yet the nanoscale carrier dynamics that ultimately govern their perfor…
An ultrafast diamond nonlinear photonic sensor
Daisuke Sato, Junjie Guo, Takuto Ichikawa +6
The integration of light and materials technology is key to the creation of innovative sensing technologies. Sensing of electric and magnetic fields, and temperature with high spat…
Next-Generation Time-Resolved Scanning Probe Microscopy
Katsuya Iwaya, Hiroyuki Mogi, Shoji Yoshida +3
Understanding the nanoscale carrier dynamics induced by light excitation is the key to unlocking futuristic devices and innovative functionalities in advanced materials. Optical pu…
Time-resolved force microscopy using delay-time modulation method
Hiroyuki Mogi, Rin Wakabayashi, Shoji Yoshida +6
We developed a time-resolved force microscopy technique by integrating atomic force microscopy using a tuning-fork-type cantilever with the delay time modulation method for optical…
Externally-triggerable optical pump-probe scanning tunneling microscopy with a time resolution of tens-picosecond
Katsuya Iwaya, Munenori Yokota, Hiroaki Hanada +5
Photoinduced carrier dynamics of nanostructures play a crucial role in developing novel functionalities in advanced materials. Optical pump-probe scanning tunneling microscopy (OPP…
A Versatile Post-Doping Towards Two-Dimensional Semiconductors
Y. Murai, S. Zhang, T. Hotta +13
We have developed a simple and straightforward way to realize controlled post-doping towards 2D transition metal dichalcogenides (TMDs). The key idea is to use low-kinetic energy d…
The Atomic and Electronic structure of 0° and 60° grain boundaries in MoS2
Terunobu Nakanishi, Shoji Yoshida, Kota Murase +8
We have investigated atomic and electronic structure of grain boundaries in monolayer MoS2, where relative angles between two different grains are 0 and 60 degree. The grain bounda…