High Responsivity and Quantum Efficiency of Graphene / Silicon Photodiodes Achieved by Interdigitating Schottky and Gated Regions

Abstract

Graphene / silicon (G/Si) heterostructures have been studied extensively in the past years for applications such as photodiodes, photodetectors and solar cells, with a growing focus on efficiency and performance. Here, a specific contact pattern scheme with interdigitated Schottky and graphene/insulator/silicon (GIS) structures is explored to experimentally demonstrate highly sensitive G/Si photodiodes. With the proposed design, an external quantum efficiency (EQE) of > 80 % is achieved for wavelengths ranging from 380 to 930 nm. A maximum EQE of 98% is observed at 850 nm, where the responsivity peaks to 635 mA/W, surpassing conventional Si p-n photodiodes. This efficiency is attributed to the highly effective collection of charge carriers photogenerated in Si under the GIS parts of the diodes. The experimental data is supported by numerical simulations of the diodes. Based on these results, a definition for the true active area in G/Si photodiodes is proposed, which may serve towards standardization of G/Si based optoelectronic devices.

arXiv comment24 pages, 5 figures

References in corpus (13)

• Universal Dynamic Conductivity and Quantized Visible Opacity of Suspended Graphene
• High Efficiency Graphene Solar Cells by Chemical Doping
• CMOS-compatible graphene photodetector covering all optical communication bands
• Graphene Schottky diodes: an experimental review of the rectifying graphene/semiconductor heterojunction
• On-chip integrated, silicon-graphene plasmonic Schottky photodetector, with high responsivity and avalanche photogain
• Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor Based Diodes
• Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device
• Hybrid Graphene/Silicon Schottky photodiode with intrinsic gating effect
• Hybrid graphene tunneling photoconductor with interface engineering towards fast photoresponse and high responsivity
• Graphene-Silicon Schottky diodes for photodetection
• High Photocurrent in Gated Graphene-Silicon Hybrid Photodiodes
• Spectral Sensitivity of Graphene/Silicon Heterojunction Photodetectors
• Towards Substrate Engineering of Graphene-Silicon Schottky Diode Photodetectors

Cited by in corpus (5)

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• Visible and infrared photocurrent enhancement in a graphene-silicon Schottky photodetector through surface-states and electric field engineering
• Graphene-silicon device for visible and infrared photodetection