Effective g factor of 2D holes in strained Ge quantum wells

Abstract

The effective g-factor of 2D holes in modulation doped \mbox{p-SiGe/Ge/SiGe} structures was studied. The AC conductivity of samples with hole densities from $3.9\times 10^{11}$~to $6.2\times 10^{11}{\text{cm}}^{-2}$ was measured in perpendicular magnetic fields up to $8\text{T}$ using a contactless acoustic method. From the analysis of the temperature dependence of conductivity oscillations, the ${\mathrm{g}}_{\perp }$-factor of each sample was determined. The ${\mathrm{g}}_{\perp }$-factor was found to be decreasing approximately linearly with hole density. This effect is attributed to non-parabolicity of the valence band.

4 pages, 5 figures

References in corpus (3)

• Spinless composite fermions in an ultra-high quality strained Ge quantum well
• Effective g factor of low-density two-dimensional holes in a Ge quantum well
• Fractional Quantum Hall States in a Ge Quantum Well

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