2 papers
cond-mat.mes-hall2018
Universal Frequency Dependence of the Hopping AC Conductance in p-Ge/GeSi Structures in the Integer Quantum Hall Effect Regime
I. L. Drichko, A. A. Dmitriev, V. A. Malysh +6
The hopping ac conductance, which is realized at the transverse conductance minima in the regime of the integer Hall effect, has been measured using a combination of acoustic and m…
cond-mat.mes-hall2018
Effective g factor of 2D holes in strained Ge quantum wells
I. L. Drichko, A. A. Dmitriev, V. A. Malysh +5
The effective g-factor of 2D holes in modulation doped \mbox{p-SiGe/Ge/SiGe} structures was studied. The AC conductivity of samples with hole densities from ~to…