Charge sensitivity enhancement via mechanical oscillation in suspended carbon nanotube devices

Abstract

Single electron transistors (SETs) fabricated from single-walled carbon nanotubes (SWNTs) can be operated as highly sensitive charge detectors reaching sensitivity levels comparable to metallic radio frequency SETs (rf-SETs). Here we demonstrate how the charge sensitivity of the device can be improved by using the mechanical oscillations of a single-walled carbon nanotube quantum dot. To optimize the charge sensitivity $\delta Q$, we drive the mechanical resonator far into the nonlinear regime and bias it to an operating point where the mechanical third order nonlinearity is cancelled out. This way we enhance $\delta Q$, from 6 $\mu e/\sqrt{\text{Hz}}$ for the static case, to 0.97 $\mu e/\sqrt{\text{Hz}}$, at a probe frequency of $\sim$ 1.3 kHz.

arXiv comment8 pages + 12 page supplement

References in corpus (10)

• An Atomic-resolution nanomechanical mass sensor
• A Mechanical Mass Sensor with Yoctogram Resolution
• Ultrasensitive force detection with a nanotube mechanical resonator
• Strong coupling between single-electron tunneling and nano-mechanical motion
• Surpassing fundamental limits of oscillators using nonlinear resonators
• Real-Space Tailoring of the Electron-Phonon Coupling in Ultra-Clean Nanotube Mechanical Resonators
• An ultra sensitive radio frequency single electron transistor working up to 4.2 K
• Probing the charge of a quantum dot with a nanomechanical resonator
• Symmetry breaking in a mechanical resonator made from a carbon nanotube
• Highly sensitive and broadband carbon nanotube radio-frequency single-electron transistor

Cited by in corpus (6)

• Force sensitivity of multilayer graphene optomechanical devices
• Parametric strong mode-coupling in carbon nanotube mechanical resonators
• Particle number scaling for diffusion-induced dissipation in graphene and carbon nanotube nanomechanical resonators
• Carbon Nanotube Millikelvin Transport and Nanomechanics
• Optomechanical coupling and damping of a carbon nanotube quantum dot
• Conductance of a SET with a retarded dielectric layer in the gate capacitor