Stress and charge transfer in uniaxially strained CVD graphene
arXiv:1801.05586 · doi:10.1002/pssb.201600233
Abstract
Mechanical properties of graphene prepared by chemical vapor deposition (CVD) are not easily comparable to the properties of nearly perfect graphene prepared by mechanical cleavage. In this work, we attempt to investigate the mechanical performance of CVD graphene (simply supported or embedded in polymer matrix), transferred by two different techniques, under uniaxial loading with simultaneous in-situ monitoring by Raman microspectroscopy. The level of charge transfer doping and strain is assessed using the vector analysis modified for uniaxial strain. The strain distribution across the samples varies significantly, owing to the growth and transfer process, which induces wrinkles and faults in the CVD graphene. In simply supported specimens, the stress transfer efficiency is generally very low and the changes in Raman spectra are dominated by variations in the charge transfer originating from the realignment of the domains on the substrate upon the application of strain. In contrast, samples covered with an additional polymer layer exhibit an improved stress transfer efficiency, and the alterations of charge doping levels are negligible. In fully embedded specimens, the variations in stress transfer efficiencies are caused by the size of the effective graphene domains defined by cracks, folds and or/wrinkles.
References in corpus (10)
- Electrochemically Top Gated Graphene: Monitoring Dopants by Raman Scattering
- Uniaxial Strain in Graphene by Raman Spectroscopy: G peak splitting, Gruneisen Parameters and Sample Orientation
- Optical Separation of Mechanical Strain from Charge Doping in Graphene
- Interfacial Stress Transfer in a Graphene Monolayer Nanocomposite
- Theory of double-resonant Raman spectra in graphene: intensity and line shape of defect-induced and two-phonon bands
- Non-adiabatic Kohn-anomaly in a doped graphene monolayer
- Raman 2D-Band Splitting in Graphene: Theory and Experiment
- Compression Behavior of Single-layer Graphene
- Scanning Gate Microscopy on Graphene: Charge Inhomogeneity and Extrinsic Doping
- Suspended Monolayer Graphene under True Uniaxial Deformation