A study of electron and thermal transport in layered Titanium disulphide single crystals

Abstract

We present a detailed study of thermal and electrical transport behavior of single crystal Titanium disulphide flakes, which belongs to the two dimensional, transition metal dichalcogenide class of materials. In-plane Seebeck effect measurements revealed a typical metal-like linear temperature dependence in the range of 85 - 285 K. Electrical transport measurements with in-plane current geometry exhibited a nearly T^2 dependence of resistivity in the range of 10 - 300 K. However, transport measurements along the out-of-plane current geometry showed a transition in temperature dependence of resistivity from T^2 to T^5 beyond 200 K. Interestingly, Au ion-irradiated TiS2 samples showed a similar T 5 dependence of resistivity beyond 200 K, even in the current-in-plane geometry. Micro- Raman measurements were performed to study the phonon modes in both pristine and ion-irradiated TiS2 crystals.

References in corpus (9)

• Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer
• Titanic Magnetoresistance in WTe2
• Controlling electron-phonon interactions in graphene at ultra high carrier densities
• Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers
• Spin-Orbit Proximity Effect in Graphene
• Substrate limited electron dynamics in graphene
• The electronic thermal conductivity of graphene
• Electron-Phonon Interactions and the Intrinsic Electrical Resistivity of Graphene
• Rippling, buckling and melting of single- and multi-layer MoS${}_2$