Ba(Zn,Co)2As2: a II-II-V Diluted Ferromagnetic Semiconductor with N-type Carriers

Abstract

Diluted ferromagnetic semiconductors (DMSs) that combine the properties of semiconductors with ferromagnetism have potential application in spin-sensitive electronics (spintronics) devices. The search for DMS materials exploded after the observation of ferromagnetic ordering in III-V (Ga,Mn)As films. Recently, a series of DMS compounds isostructural to iron-based superconductors have been reported. Among them, the highest Curie temperature $T_C$ of 230 K has been achieved in (Ba,K)(Zn,Mn)${}_2$As${}_2$. However, most DMSs, including (Ga,Mn)As, are p-type, i.e., the carriers that mediate ferromagnetism are holes. For practical applications, DMS with n-type carriers are also advantageous. Here we report the successful synthesis of a II-II-V diluted ferromagnetic semiconductor with n-type carriers, Ba(Zn,Co)${}_2$As${}_2$. Magnetization measurements show that the ferromagnetic transition occurs up to $T_C\sim$ 45 K. Hall effect and Seebeck effect measurements jointly confirm that the dominant carriers are electrons. Through muon spin relaxation ($\mu$SR), a volume sensitive magnetic probe, we have also confirmed that the ferromagnetism in Ba(Zn,Co)${}_2$As${}_2$ is intrinsic and the internal field is static.

arXiv comment8 pages, 6 figures. Developed work of 1403.4019

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Cited by in corpus (2)

• Microscopic mechanism of high-temperature ferromagnetism in Fe, Mn, and Cr-doped InSb, InAs, and GaSb magnetic semiconductors
• Anomalous critical point behavior in dilute magnetic semiconductor (Ca,Na)(Zn,Mn)2Sb2