Diluted magnetic semiconductors with narrow band gaps

Abstract

We propose a method to realize diluted magnetic semiconductors (DMS) with p- and n-type carriers by choosing host semiconductors with a narrow band gap. By employing a combination of the density function theory and quantum Monte Carlo simulation, we demonstrate such semiconductors using Mn-doped BaZn2As2, which has a band gap of 0.2 eV. In addition, we found a new non-toxic DMS Mn-doped BaZn2Sb2, of which the Curie temperature Tc is predicted to be higher than that of Mn-doped BaZn2As2, the Tc of which was up to 230 K in the recent experiment.

18 pages, 12 figures

References in corpus (11)

• Implementation of screened hybrid functionals based on the Yukawa potential within the LAPW basis set
• Achieving High Curie Temperature in (Ga,Mn)As
• New Diluted ferromagnetic semiconductor Li(Zn,Mn)P with decoupled charge and spin doping
• Theory of Mn-doped I-II-V Semiconductors
• Possible d0 ferromagnetism in MgO doped with nitrogen
• Photoemission and X-ray Absorption Studies of the Diluted Magnetic Semiconductor Ba${}_{1-y}$K${}_y$(Zn${}_{1-x}$Mn${}_x$)${}_2$As${}_2$ Isostructural to Fe-based Superconductors
• Fermi Surfaces and $p$-$d$ Hybridization in the Diluted Magnetic Semiconductor Ba${}_{1-x}$K${}_x$(Zn${}_{1-y}$Mn${}_y$)${}_2$As${}_2$ Studied by Soft X-ray Angle Resolved Photoemission Spectroscopy
• Long-range ferromagnetic correlations between Anderson impurities in a semiconductor host
• Sign change of the spin Hall effect due to electron correlation in nonmagnetic CuIr alloys
• Effects of the crystal structure on the ferromagnetic correlations in ZnO with magnetic impurities
• Inter-impurity and impurity-host magnetic correlations in semiconductors with low-density transition-metal impurities

Cited by in corpus (8)

• Microscopic mechanism of high-temperature ferromagnetism in Fe, Mn, and Cr-doped InSb, InAs, and GaSb magnetic semiconductors
• Ba(Zn,Co)2As2: a II-II-V Diluted Ferromagnetic Semiconductor with N-type Carriers
• Minority-Spin Impurity Band in n-Type (In,Fe)As: A Materials Perspective for Ferromagnetic Semiconductors
• Two-dimensional Heisenberg models with materials-dependent superexchange interactions
• Large negative magnetoresistance in BaMn${}_2$Bi${}_2$ antiferromagnet
• Anisotropic spin distribution and perpendicular magnetic anisotropy in the layered ferromagnetic semiconductor (Ba,K)(Zn,Mn)${}_2$As${}_2$
• Densities of states in Fe-doped III-V semiconductors: a first-principles study
• New p- and n-type ferromagnetic semiconductors: Cr-doped BaZn2As2